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Metallic tube-tolerant ternary dynamic content-addressable memory based on carbon nanotube transistors
Journal article   Peer reviewed

Metallic tube-tolerant ternary dynamic content-addressable memory based on carbon nanotube transistors

Daniel Hellkamp and Kundan Nepal
Micro & nano letters, Vol.10(4), pp.209-212
04/2015
DOI: https://doi.org/10.1049/mnl.2014.0582

Abstract

CNTFET design ternary DCAM cell carbon nanotube field effect transistors SPICE simulation SPICE metallic CNT dynamic content-addressable memory cell ternary logic asymmetrically correlated tube technique logic design content-addressable storage metallic tube-tolerant ternary dynamic content-addressable memory
The design of a dynamic content-addressable memory (DCAM) cell using carbon nanotube (CNT) field effect transistors is explored. A four CNTFET design is presented and the functionality of a ternary DCAM cell using SPICE simulation is verified. Using an array of asymmetrically correlated tube technique, it is demonstrated how the presented design could be made functional even in the presence of metallic CNTs.

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