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Carbon nanotube field effect transistor-based content addressable memory architectures
Journal article   Peer reviewed

Carbon nanotube field effect transistor-based content addressable memory architectures

K. Nepal and K. You
Micro & nano letters, Vol.7(1), pp.20-23
01/01/2012
DOI: https://doi.org/10.1049/mnl.2011.0576

Abstract

Materials Science, Multidisciplinary Nanoscience & Nanotechnology Science & Technology Science & Technology - Other Topics Materials Science Technology
The authors investigate the use of carbon nanotube-based field effect transistors for the design of content addressable memory (CAM). An alternate design of a ternary content addressable memory (3CAM) using three-valued circuit structures is presented and it has been shown that the new design can lead to a 25% savings in area with no loss in search speed.

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