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Ternary content addressable memory cells designed using ambipolar carbon nanotube transistors
Conference proceeding

Ternary content addressable memory cells designed using ambipolar carbon nanotube transistors

K. Nepal
10th IEEE International NEWCAS Conference, pp.421-424
06/2012
DOI: https://doi.org/10.1109/NEWCAS.2012.6329046

Abstract

CNTFETs Computer aided manufacturing Electron tubes Logic gates Threshold voltage
This paper explores the use of carbon nanotube transistors and their ambipolar properties to create ternary content addressable memory (CAM) cells. We show designs and simulation results for a traditional ternary cell created using two storage elements as well as an area efficient (up to 31% lower) truly 3-valued ternary cell.

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